The opportunities for wide band-gap devices (SiC and GaN) in power electronics

This presentation is a tutorial session on the opportunities for wide band-gap devices (SiC and GaN) in power electronics. New devices in silicon carbide (SiC) and gallium nitride (GaN) are now on offer from several sources, with new parts appearing all the time. The material properties of SiC and GaN offer devices with improved performance relative to their silicon counterparts. SiC diodes, for example, have gained wide acceptance, leading to improved system performance and lower cost. At the same time, it is not obvious which of the transistors now on the market can give real benefits in actual applications. The tutorial identifies where these new devices can offer worthwhile advantages and covers the practicalities of implementing circuits using them, which is not always straightforward.