IET

Co-Authors: Ahmed A. Ibrahim Mohammad Monfared Saeed Jahdi Amar Karout Craig Fisher Swansea University, Vishay Newport & Bristol University

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TDDB Reliability Assessment of Gate Oxides in Commercial 1200 V SiC MOSFETs

Session
Duration: 14 mins
Publication date: 13 Apr 2026
Location: London, UK
Part of event PEMD 2026

About the session

TDDB Reliability Assessment of Gate Oxides in Commercial 1200 V SiC MOSFETs

Co-Authors:

Ahmed A. Ibrahim

Mohammad Monfared

Saeed Jahdi

Amar Karout

Craig Fisher

Swansea University, Vishay Newport & Bristol University

Channels

Electronics

Electronics

Power

Power