This video isn’t available to you right now
Login to check your access and watch the full session.
To redeem an access code, first log in.
- Session
- 00:00
- Duration: 28 mins
- Publication date: 10 Apr 2014
- Location: IETTV_Room, IETTV_Venue, Manchester, United Kingdom
- Part of event 7th International Conference on Power, Electronics, Machines & Drives (PEMD 2014)
About the session
This presentation describes the design of a 300-watt isolated power supply for a MOS gate driver circuit in medium- and high-voltage applications. The key feature of the developed power supply is having a very low circuit input-to-output parasitic capacitance, thus maximizing its noise immunity. This makes it suitable for modular stacking applications. The converter is a voltage-controlled current source, utilizing a transformer that has an extremely low inter-winding parasitic capacitance. Experiments show that an overall circuit input-to-output parasitic capacitance of 10 pF can be achieved. Design analysis and experimental results are provided to prove the feasibility of the converter.
Channels