This presentation describes the design procedure of a gate drive circuit for driving silicon carbide (SiC) MOSFETs at switching frequencies up to fSW = 5 MHz. Such high switching frequencies are required in the field of plasma generation and inductive heating. Therefore, this work both analyses the demand of gate drive power needed for different power semiconductors and proposes a possible solution for how to implement a gate driver especially for SiC MOSFETs.
