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Critical issues in fabrication of RF MEMS switches

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Conference
  • Session
  • Friday, 28 April 2006
  • 00:28 - 00:28
  • Duration: 16 mins
  • Publication date: 28 Apr 2006
  • Location: IETTV_Room, IETTV_Venue, London, United Kingdom
  • Part of event IET Seminar on MEMS Sensors and Actuators

About the session

RF MEMS switches have been fabricated. These switches are in the forms of cantilevers and bridges supported by silicon nitride beams. Two critical issues in the fabrication have been identified, which are topography of contact electrodes and stress induced bending of switch beams. Techniques have been developed to produce better planarised substrate and to realise controllable stress induced bending. These techniques are also applicable to fabrication of other microactuators based on silicon nitride beams.

Channels

Electronics

Electronics

Speakers

  • BP

    Ben Papé

    Rutherford Appleton Laboratory, Central Microstructure Facility

  • JY

    Jin Yang

    Rutherford Appleton Laboratory, Central Microstructure Facility

  • JY

    Jin Yang

    Rutherford Appleton Laboratory, Central Microstructure Facility

  • JY

    Jin Yang

    Rutherford Appleton Laboratory, Central Microstructure Facility

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