This presentation discusses the integration of InGaAs/InP travelling-wave phototransistor detectors and patch antennas for photonic/microwave links for next generation very-high-speed (up to 100 GHz) internet traffic. Topics covered include: development of high-temperature GaN-based devices; electronics in hot/harsh environments; study of high current effects in HBTs; and novel HFET structures in GaN-based materials for very high-power/high-frequency amplifiers.
