Gallium Nitride Power Transistors in Narrow and Wide Bandwidth Applications

Using waveform measurements and active harmonic load-pull, this presentation describes investigations made into two modes of operation in which a high power GaN HEMT provides narrowband very high efficiency operation, as well as efficient broadband performance, demonstrating the significant benefits in terms of the versatility of GaN devices for PA applications.

Peter Wright is studying for his PhD in Electronic Engineering at Cardiff University, presently in his second year. Peter graduated with BEng in Electronic Engineering also at Cardiff University. His current research work is focusing on the design and development of high efficiency power amplifiers using high power waveform engineering, and further study proposing increases in efficient PA operation across wide bandwidths.